Electric Field Photo Mask for Photolithography
1/ A –ve charge gun shoots –ve charges at the glass plate & forms a pattern with –ve charges.
2/ The light source for this lithography is a –ve charged ion beam.
3/ This –ve charged ion beam goes through a divergent lens & scatter light onto the glass plate.
4/ The pattern formed with –ve charges on the glass plate will repel the ion beam light while the area with no –ve charges on the glass plate allows ion beam light to go through.
5/ Thus a pattern is formed on the substrate & the photo resist is hardened.
6/ This method can save time in Photolithography for Microchip & Printed Circuit Board Manufacturing with very good resolution.
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ABOUT THE ENTRANT
- Name:Francis Lai
- Type of entry:individual
- Patent status:none